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| SST2625 Elektronische Bauelemente -2.3A, -30V,RDS(ON) 135m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST2625 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST2625 is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref. Features * Low On-Resistance * Low Gate Charge D1 D2 Dimensions in millimeters D1 6 S1 5 D2 4 G1 G2 Date Code 2625 S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Continuous Drain Current 3 Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 12 -2.3 -2.0 -20 1.2 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 110 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SST2625 Elektronische Bauelemente -2.3A, -30V,RDS(ON) 135m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25oC ,ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-2A -0.02 _ _ _ _ -0.5 _ _ _ _ -1.2 100 -1 -25 135 185 265 6 _ _ _ _ _ _ 425 _ _ _ _ _ 4 0. 5 2 5 6 20 3 265 42 32 3.3 Static Drain-Source On-Resistance 2 RDS(ON) _ _ m[ VGS=-4.5V, ID=-1.6A VGS=-2.5V, ID=-1.0A ID=-2A VDS=-24V VGS=-4.5V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ nC VDD=-15V ID=-1A nS VGS=-10V RG=3.3[ RD=15 [ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-5V, ID=-2A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Symbol VDS Trr Qrr Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1 A, VGS=0V. . Is=-2A, V GS=0V dl/dt=100A/uS _ _ 21 16 _ _ nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 2 01-Jun-2002 Rev. A Page 2 of 4 SST2625 Elektronische Bauelemente -2.3A, -30V,RDS(ON) 135m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SST2625 Elektronische Bauelemente -2.3A, -30V,RDS(ON) 135m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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